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* Refer to Pd characteristics diagram The values for theBA15218F are those when it is mounted on a glass epoxy board (50mm 50mm 16mm)3, CB1911-30a73 OUTPUT CURRENT (CONTINUOUS): 28Aa73 DIGITAL INPUT CLAMPED AT 32V a73 PROTECTION AGAINST: LOSS OF GROUND,SHORTED LOAD AND OVERTEMPERATURE, CB1911-30Optical Input Power+10 dBmOperating BaseTemperature -20 to +85°CFiber Bending Radius 13” min Fiber Pull Strength05kgrams, CB1911-30 Power Supply Rejection Ratio, PSRR78dB VSENSE = 60 mV, VCC = 3 V to 28 V (ADM4073T)85 VSENSE = 24 mV, VCC = 3 V to 28 V (ADM4073F) 90 dB VSENSE = 12 mV, VCC = 3 V to 28 V (ADM4073H) , CB1911-3019142 When communication reservation function is disabled (IICFnIICRSVn bit = 1)602 1915 Cautions603 1916 Communication Operations603 19161 Master operation 1 603 , CB1911-30For VUV Detection, 19 mm (3/4 Inch) Diameter, 10-stage,Head-On Type, Solar Blind Response (115 nm to 200nm)CHARACTERISTICS (at 25 °C)VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE, CB1911-30 MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistorsTheefficient geometry design achieves very low on-state re-, CB1911-30Ordering InformationPart No Temp Range Pkg OutlineEL7202CN b40§Ctoa85§C 8-Pin P-DIP MDP0031EL7202CS b40§Ctoa85§C 8-Pin SO MDP0027, CB1911-30Gate-Emitter voltage VGESCollector ContinuousTc=25°C ICcurrent Tc=80°C1msTc=25°C IC pulse, CB1911-30Features Build in Biasing Circuit; To reduce using parts cost & PC board space Low noise characteristics;(NF = 21 dB typ at f = 900 MHz), CB1911-30