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G49G119G119G119G46G115G101G109G116G101G99G104G46G99G111G109G80G82G79G84G69G67G84G73G79G78G32G80G82G79G68G85G67G84G83G83G76G86G85G50G46G56G45G52, LIST/198for logic and +10 to +45 V for the motor Maximum output current is 650 mA perchannelA special logic function is used to select slow or fast current decay in the outputstage for improved high-speed microstepping, LIST/198The test circuit in Figure 11 was used to measure LM6588settling time for a 2V pulse and 1k load, which representsthe maximum transient amplitude and output load for agamma buffer With this test system, the LM6588 settled to, LIST/198The internal reverse bias protection eliminates the require-ment for a reverse voltage protection diode This savesboth cost and board spaceAnother reverse voltage protection technique is illustrated, LIST/198n Small Size Flat Ceramic Package (76 x 127 x 3 mm) n Operating Speed :OD-S589A (155 Mbps : STM-1/OC3) OD-S589B (622 Mbps : STM-4/OC12) , LIST/198 5 Volt FlashFile memory renders a variety of density offerings in the same package The 4-, 8-,and 16-Mbit FlashFile memories provide high-density, low-cost, nonvolatile, read/write storage solutions for awide range of applications Their symmetrically-blocked architecture, flexible voltage, and extended cycling, LIST/198C0068 TrenchFETC0114 Power MOSFET:25-V RatedC0068 ESD Protected:3000 VAPPLICATIONSC0068 Battery Protection Circuitry, LIST/198h FE2 I C= 10 mA dc, V CE = 10 V 40 400 ---h FE3 I C= 30 mA dc, V CE = 10 V 25 --- ---V CE(sat) I C= 30 mA dc, I B = 30 mA --- 03 V dcElectrical Characteristics, LIST/198760 1360 630 1230 380 980 313 913 nsB11a CLKOUT to TA, BI assertion (when driven by the memory controller or PCMCIA interface) (MAX = 000 × B1 + 930, LIST/198*Device mounted on FR-4 PCB 16" X 16" X 006"1997 Fairchild Semiconductor CorporationNOTE: Source & Drain are interchangeable, LIST/198
