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The ST1200 is available in wafer form (either sawnor unsawn) and in micromodule form (on film)For deliveries in wafer form, the memory content isat logical “0”, except for the 9th bit (bit 8), LIST/199Thermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose625, LIST/199●Electrical Characteristics (If not specified Tl=25℃)Item Symbol Conditions Ratings UnitForward Voltage VF IF=11A, Pulse measurement Max098 VReverse Current IR VR=200V,Pulse measurement Max10 μA, LIST/199Power Save Voltage, VPS (V) Power Save Voltage, VPS (V)TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified)UPC8106T, UPC8109TUPC8106T, UPC8109T, LIST/199DESCRIPTIONThe PT2309 is a headphone driver IC, it can working on wide supply range Utilizing CMOS Technology, it has very low power consumption is in stand-by mode Total harmonic distortion is lower , LIST/199The MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/MAX2327 evaluation kits (EV kits) simplify evaluation ofthese high-linearity, silicon germanium (SiGe), dual-band LNAs/mixers They enable testing of the devices’, LIST/199Part Number Accuracy Output Voltage Package TypeSPX385AM1-12 10% 1235V 3-Pin SOT-89SPX385AM1-12/TR 10% 1235V 3-Pin SOT-89SPX385AS-12 10% 1235V 8-Pin NSOIC, LIST/199In its most simple configuration, the DS1012 2-in-1Sub-Miniature Silicon Delay Line Chip provides two in-puts, each of which in turn provides independent delaysto a pair of outputs The DS1012-1 and DS1012-3 are, LIST/199planar constructionThis device is intended for use as a freewheeling/clampingdiode and rectifier in a variety of switching power suppliesand other power switching applications Its low stored, LIST/199The RF6100-2 is a high-power, high-efficiency linear amplifiermodule specifically designed for 3V handheld systems Thedevice is manufactured on an advanced third-generation GaAs HBT process and has been designed for use as the final, LIST/199