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H Undefined EDO page mode delayed write cycleL H to L H to L H to L L to H Valid EDO page mode read-modify-write cycleL L L H H Open Read cycle (Output disabled)5, LIST/289Ordering number:ENN6309A2SA2016/2SC5569SANYO Electric Co,LtdSemiconductor CompanyTOKYO OFFICE Tokyo Bldg, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN, LIST/289– Greater than 100 years Data Retention Low Power Consumption:– Active Current: 10 mA (typical) for Flash and20 mA (typical) for SRAM Read, LIST/289BYZ 50A22BYZ 50A47BYZ 50K22BYZ 50K47Silicon Protectifiers Silizium Schutzgleichrichterwith TVS characteristics mit Begrenzereigenschaften, LIST/2895KP120A 133 148 50 120 10 26 1945KP150 166 204 50 150 10 19 2695KP150A 166 186 50 150 10 21 2425KP160 178 217 50 160 10 17 285, LIST/289658(H) × 496(V) sensor with a very low dark current One important feature of the TC237 very high-resolutionsensor is the ability to capture a full 340,000 pixels per field The image sensor also provides high-speed image-transfer capability This capability allows for a continuous electronic exposure control without the loss ofsensitivity and resolution inherent in other technologies The charge is converted to signal voltage at 20 μV per, LIST/2899) BCLK:32fs/48fs/64fs (64fs only at master mode)ASAHI KASEI [AK7712A-VT]0180-E-02 1997/12- 3 - AK7712A Block Diagram, LIST/289* Low Forward Voltage Drop* Low Thermal ResistanceTypical Applications* Welding and Plasma Cutting Machines, LIST/289Although not required, a Schottky diode (such as theMBR0520) connected between LX and OUT allowslower start-up voltages (Figure 10) and is recommend-ed for single-cell operation Note that adding this diode, LIST/289Power Transistors2SC3970, 2SC3970ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switching, LIST/289
