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C511 25 KB – 128 B – T0, T1 – 3C511A 4 KB – 256 B – T0, T1 – 3C513 8 KB – 256 B – T0, T1, T2 33C513A 12, 16 KB – 256 B 256 B T0, T1, T2 33, LIST/393G01 G02G03G04G05G01G06G01G04G01G07G08G09G05G0AG01G06G01G03G0BG01G07G0CG0DG0AG01G0AG0EG0FG08G10G01G01 G01 G08G11G12G13G01G04G14G14G03G01G01G05G0FG15G0DG16G09G01G17G16G0FG18G13G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G02G03G04G05G06, LIST/393025 01025DIMENSIONS (inch dimensions are derived from the original mm dimensions)Notes1 Plastic or metal protrusions of 015 mm maximum per side are not included, LIST/393logic functions within the device The MAX architecture is100% user-configurable, allowing the devices to accommo-date a variety of independent logic functionsThe 192 macrocells in the CY7C341B are divided into 12 Logic, LIST/393voltageVCE(sat) — 02 06 V IC = 150 mA, IB = 15 mA*2Base to emitter voltage VBE — 064 — V VCE = 3 V, IC = 10 mANotes: 1 The 2SC3553 is grouped by hFE1 as follows, LIST/393Flip-Flops for Operation in Transparent,Latched, Clocked, or Clock-Enabled ModeC0068 GTL Buffered CLKAB Signal (CLKOUT)C0068 Translate Between GTL/GTL+ Signal Levels, LIST/3933 Attenuation referenced to insertion loss4 Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidthPreliminaryGaAs IC 3 Bit Digital Attenuator 4 dB LSB Positive Control 075–2 GHz AA100-59, LIST/393 Semiconductor MSM521008DESCRIPTIONThe MSM521008 is a 131,072-word by 8-bit CMOS fast static RAM featuring a single 5 V powersupply operation and direct TTL input/output compatibilitySince the circuitry is completely static,, LIST/393 16 Nonvolatile Data Registers for Each Potentiometer Nonvolatile Storage of Multiple Wiper Positions Power On Recall Loads Saved Wiper Position on , LIST/3934 W48S111-14 logic inputs have internal pull-up devices, except SEL100/66# (pull-ups not full CMOS level)W48S111-14PRELIMINARYPRELIMI-8, LIST/393
